Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high- speed and low-power phase change memory

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into G...

Equivalent circuit for VO2 phase change material film in reconfigurable frequency selective surfaces

Articles you may be interested in Development of cap-free sputtered GeTe films for inline phase change switch based RF circuits Ultra-thin perfect absorber employing a tunable phase change material Appl. Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application Appl. Ga 2 Te 3 phase change material for low-power phase change memory application Appl.

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memor...

Electrical phase change of Ga:La:S:Cu films

Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 Om in the amorphous state and 40 Om in the crystalline state. The crystallisation time was measured using an optical pump probe...

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application